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參數(shù)資料
| 型號(hào)： | M29DW323DT90N1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，雙行8時(shí)24分，啟動(dòng)塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 18/49頁 |
| 文件大?。?/td> | 818K |
| 代理商： | M29DW323DT90N1F |
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M29DW323DT, M29DW323DB
18/49
Enter Extended Block Command
The M29DW323D has an extra 64KByte block
(Extended Block) that can only be accessed using
the Enter Extended Block command. Three Bus
write cycles are required to issue the Extended
Block command. Once the command has been is-
sued the device enters Extended Block mode
where all Bus Read or Program operations to the
Boot Block addresses access the Extended Block.
The Extended Block (with the same address as
the boot block) cannot be erased, and can be
treated as one-time programmable (OTP) memo-
ry. In Extended Block mode the Boot Blocks are
not accessible. In Extended Block mode dual op-
erations are possible, with the Extended Block
mapped in Bank A. When in Extended Block
mode, Erase Commands in Bank A are not al-
lowed.
To exit from the Extended Block mode the Exit Ex-
tended Block command must be issued.
The Extended Block can be protected, however
once protected the protection cannot be undone.
Exit Extended Block Command
The Exit Extended Block command is used to exit
from the Extended Block mode and return the de-
vice to Read mode. Four Bus Write operations are
required to issue the command.
Block Protect and
Chip Unprotect Commands
Groups of blocks can be protected against acci-
dental Program or Erase. The Protection Groups
are shown in Appendix A, Tables 21 and 22, Block
Addresses. The whole chip can be unprotected to
allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix D.
Table 5. Commands, 16-bit mode, BYTE = V
IH
Note:
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, BKA Bank Address. All values in the table are in
hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
(BKA)
555
90
Program
4
555
AA
2AA
55
555
A0
PA
PD
Double Word Program
3
555
50
PA0
PD0
PA1
PD1
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Erase Suspend
1
BKA
B0
Erase Resume
1
BKA
30
Read CFI Query
1
55
98
Enter Extended Block
3
555
AA
2AA
55
555
88
Exit Extended Block
4
555
AA
2AA
55
555
90
X
00
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M29DW323DT90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48TSOP - Trays |
| M29DW323DT90N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
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