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參數(shù)資料
| 型號(hào)： | M29DW128F60NF1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 80/93頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M29DW128F60NF1 |
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12 Part numbering
M29DW128F
80/93
Table 39.
Primary Algorithm-Specific Extended Query Table
Address
Data
Description
Value
x16
x8
40h
80h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h
82h
0052h
"R"
42h
84h
0049h
"I"
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0033h
Minor version number, ASCII
"3"
45h
8Ah
000Ch
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of sectors in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
Yes
49h
92h
0006h
Block Protect /Unprotect
06 = M29DW128F
6
4Ah
94h
00E7
Simultaneous Operations,
x = number of blocks (excluding Bank A)
231
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0002h
Page Mode, 00 = not supported, 02 = 8-Word page
Yes
4Dh
9Ah
00B5h
V
PP
Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100mV
11.5V
4Eh
9Ch
00C5h
V
PP
Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100mV
12.5V
4Fh
9Eh
0001h
Top/Bottom Boot Block Flag
00h = Uniform device
01h = 8 x8 KByte Blocks or 4KWords, Top and Bottom Boot with
Write Protect
02h = Bottom boot device
03h = Top Boot Device
04h = Both Top and Bottom
T/B
50h
A0h
0001h
Program Suspend, 00 = not supported, 01 = supported
Yes
57h
AEh
0004h
Bank Organization, 00 = data at 4Ah is zero
X = number of banks
4
58h
B0h
0027h
Bank A information
X = number of blocks in Bank A
39
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW128F60NF1E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1F | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1T | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6 | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6E | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F60NF1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| M29DW128F60NF6E | 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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