參數(shù)資料
型號： M295V100-T70XM3R
廠商： 意法半導體
元件分類： FLASH
英文描述： 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
中文描述： 1兆位的128KBx8或64Kbx16，有啟動區(qū)域的單電源閃存
文件頁數(shù)： 16/30頁
文件大?。?/td> 207K
代理商： M295V100-T70XM3R
Symbol
Alt
Parameter
M29F100T / M29F100B
Unit
-70
-90
-120
V
CC
= 5V
±
5%
V
CC
= 5V
±
10% V
CC
= 5V
±
10%
High Speed
Interface
Standard
Interface
Standard
Interface
Min
Max
Min
Max
Min
Max
t
AVAV
t
WC
Address Validto Next Address Valid
70
90
120
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable
Low
0
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable
High
35
45
50
ns
t
DVWH
t
DS
Input Valid to Write Enable High
30
45
50
ns
t
WHDX
t
DH
Write Enable High to Input
Transition
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable
High
0
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable
Low
20
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address
Transition
45
45
50
ns
t
GHWL
Output Enable High to Write
Enable Low
0
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
50
μ
s
t
WHGL
t
OEH
Write Enable High to Output
Enable Low
0
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise Timeto V
ID
500
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
500
ns
t
WHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
30
35
50
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table15. WriteAC Characteristics,Write Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or–40 to 125
°
C)
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmay besuspendedbythisinstruc-
tion which consists of writing the command B0h
without anyspecificaddress.No Codedcyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.TheToggle
bitswill stoptogglingbetween0.1
μ
sand15
μ
s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 togglingand DQ6 at ’1’. A Read from
16/30
M29F100T, M29F100B
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相關代理商/技術參數(shù)
參數(shù)描述
M295V100-T70XM3TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100-T70XM6R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100-T70XM6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100-T70XN1R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100-T70XN1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
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