參數(shù)資料
型號(hào): M295V002T-120XP1TR
廠商: 意法半導(dǎo)體
英文描述: 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
中文描述: 2兆位的256Kb × 8,啟動(dòng)座單電源閃存
文件頁(yè)數(shù): 21/29頁(yè)
文件大小: 196K
代理商: M295V002T-120XP1TR
READ DQ5 &
DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369
DQ7
DATA
YES
NO
YES
NO
DQ5
= 1
DQ7
DATA
YES
NO
Figure 11. DataPolling Flowchart
READ
DQ2, DQ5 & DQ6
START
READ DQ2, DQ6
FAIL
PASS
AI01873
DQ2,
DQ6
=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ2,
DQ6
=
TOGGLE
Figure 12. DataToggle Flowchart
Parameter
M29F002T / M29F002NT / M29F002B
Unit
Min
Typ
Typical after
100k W/E Cycles
Chip Erase (Preprogrammed)
0.7
0.9
sec
Chip Erase
2.4
2.5
sec
Boot Block Erase
0.6
sec
Parameter Block Erase
0.5
sec
Main Block (32Kb) Erase
0.9
sec
Main Block (64Kb) Erase
1.0
sec
Chip Program (Byte)
3.2
3.2
sec
Byte Program
11
11
μ
s
Program/Erase Cycles (per Block)
100,000
cycles
Table 18. Program, EraseTimes and Program, EraseEndurance Cycles
(T
A
= 0 to 70
°
C)
21/29
M29F002T, M29F002NT, M29F002B
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