參數(shù)資料
型號(hào): M28W800C-ZBT
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
中文描述: 8兆位512KB的x16插槽,啟動(dòng)塊3V電源快閃記憶體
文件頁(yè)數(shù): 36/49頁(yè)
文件大?。?/td> 369K
代理商: M28W800C-ZBT
M28W800CT, M28W800CB
36/49
Table 28. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2
n
μs
16μs
20h
0004h
Typical time-out for Double Word Program = 2
n
μs
16μs
21h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
22h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
23h
0005h
Maximum time-out for word program = 2
n
times typical
512μs
24h
0005h
Maximum time-out for Double Word Program = 2
n
times typical
512μs
25h
0003h
Maximum time-out per individual block erase = 2
n
times typical
8s
26h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
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