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    參數(shù)資料
    型號(hào): M28W800BB90ZB6T
    廠商: 意法半導(dǎo)體
    英文描述: 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
    中文描述: 8兆位512KB的x16插槽,啟動(dòng)塊3V電源快閃記憶體
    文件頁(yè)數(shù): 41/49頁(yè)
    文件大?。?/td> 369K
    代理商: M28W800BB90ZB6T
    41/49
    M28W800CT, M28W800CB
    Figure 18. Double Word Program Flowchart and Pseudo Code
    Note: 1. Status check of b1 (Protected Block), b3 (V
    PP
    Invalid) and b4 (Program Error) can be made after each program operation or after
    a sequence.
    2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
    3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
    Write 30h
    AI03539b
    Start
    Write Address 1
    & Data 1 (3)
    Read Status
    Register
    YES
    NO
    b7 = 1
    YES
    NO
    b3 = 0
    NO
    b4 = 0
    VPP Invalid
    Error (1, 2)
    Program
    Error (1, 2)
    YES
    End
    YES
    NO
    b1 = 0
    Program to Protected
    Block Error (1, 2)
    Write Address 2
    & Data 2 (3)
    double_word_program_command (addressToProgram1, dataToProgram1,
    addressToProgram2, dataToProgram2)
    {
    writeToFlash (any_address, 0x30) ;
    writeToFlash (addressToProgram1, dataToProgram1) ;
    /*see note (3) */
    writeToFlash (addressToProgram2, dataToProgram2) ;
    /*see note (3) */
    /*Memory enters read status state after
    the Program command*/
    do {
    status_register=readFlash (any_address) ;
    /* E or G must be toggled*/
    } while (status_register.b7== 0) ;
    if (status_register.b3==1) /*VPP invalid error */
    error_handler ( ) ;
    if (status_register.b4==1) /*program error */
    error_handler ( ) ;
    if (status_register.b1==1) /*program to protect block error */
    error_handler ( ) ;
    }
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