參數(shù)資料
型號(hào): M28W160CT90N6S
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 21/50頁
文件大?。?/td> 327K
代理商: M28W160CT90N6S
21/50
M28W160CT, M28W160CB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 13. Operating and AC Measurement Conditions
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
Table 14. Capacitance
Symbol
Note: Sampled only, not 100% tested.
M28W160CT, M28W160CB
Parameter
70
85
90
100
Units
Min
Max
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
V
V
DDQ
Supply Voltage (V
DDQ
V
DD
)
2.7
3.6
2.7
3.6
2.7
3.6
1.65
3.6
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
50
50
50
50
pF
Input Rise and Fall Times
5
5
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref.
Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI00610
VDDQ
0V
VDDQ/2
AI00609C
VDDQ
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
25k
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M28W160CT90ZB1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160CT90ZB1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory