參數(shù)資料
型號: M28W160BTB100GB6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
中文描述: 16兆1兆x16插槽,低電壓啟動座快閃記憶體
文件頁數(shù): 45/50頁
文件大小: 860K
代理商: M28W160BTB100GB6T
45/50
M28W160ECT, M28W160ECB
Figure 22. Locking Operations Flowchart and Pseudo Code
Write
01h, D0h or 2Fh
AI04364
Read Block
Lock States
YES
NO
Locking
change
confirmed
Start
Write 60h
locking_operation_command (address, lock_operation) {
writeToFlash (any_address, 0x60) ; /*configuration setup*/
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
/*Check the locking state (see Read Block Signature table )*/
writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/
}
Write FFh
Write 90h
End
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (any_address, 0x90) ;
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