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參數(shù)資料
| 型號： | M28S-D |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | M28S-D |
M28S
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 0.625Watts of Power Dissipation.
Collector-current 1.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(I C=1.0mAdc, IB=0)
20
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(I C=0.1mAdc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=0.1mAdc, IC=0)
6.0
---
Adc
ICBO
Collector Cutoff Current
(V CB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(VCE=20Vdc, IE=0)
----
5.0
Vdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(I C=1.0mAdc, VCE=1.0Vdc)
290
1000
---
hFE-2
DC Current Gain
(I C=100mAdc, VCE=1.0Vdc)
300
1000
---
h FE-3
DC Current Gain
(I C=300mAdc, VCE=1.0Vdc)
300
1000
---
h FE-4
DC Current Gain
(I C=500mAdc, VCE=1.0Vdc)
300
1000
---
V CE(sat)
Collector-Emitter Saturation Voltage
(I C=600mAdc, IB=20mAdc)
---
0.55
Vdc
fT
Transition Frequency
(VCE=10Vdc, IC=50mAdc, f=30MHz)
100
---
MHz
CLASSIFICATION OF HFE
Rank
B
C
D
Range
300-550
500-700
650-1000
TO-92
AE
B
C
D
G
Revision:
5
200
7/03/02
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
E
C
B
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
Marking: M28S X
M28S-B
M28S-C
M28S-D
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