參數(shù)資料
型號(hào): M28R400CTT120ZB1T
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
中文描述: 4兆位(256Kb的x16插槽,引導(dǎo)塊)1.8V電源快閃記憶體
文件頁(yè)數(shù): 14/50頁(yè)
文件大?。?/td> 755K
代理商: M28R400CTT120ZB1T
21/50
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
Conditions
summarized
in
Table
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Table 13. Capacitance
Note: Sampled only, not 100% tested.
Parameter
M28R400CT, M28R400CB
Units
90
120
MinMax
VDD Supply Voltage
1.7
2.0
1.65
2.2
V
VDDQ Supply Voltage (VDDQ ≤ VDD)
1.7
2.0
1.65
2.2
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (CL)
30
pF
Input Rise and Fall Times
10
ns
Input Pulse Voltages
0 to VDDQ
V
Input and Output Timing Ref. Voltages
VDDQ/2
V
AI00610
VDDQ
0V
VDDQ/2
AI00609C
VDDQ
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1F
VDD
0.1F
VDDQ
25k
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
6pF
COUT
Output Capacitance
VOUT = 0V
12
pF
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