參數(shù)資料
型號: M28R400CTB90ZB6T
廠商: 意法半導體
英文描述: 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
中文描述: 4兆位(256Kb的x16插槽,引導塊)1.8V電源快閃記憶體
文件頁數(shù): 5/50頁
文件大小: 755K
代理商: M28R400CTB90ZB6T
13/50
Table 3. Commands
Note: 1. X = Don’t Care.
2. The signature addresses are listed in Tables 4, 5 and 6.
3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
Commands
No. of
Cycles
Bus Write Operations
1st Cycle
2nd Cycle
3nd Cycle
Bus
Op.
Addr
Data
Bus
Op.
Addr
Data
Bus
Op.
Addr
Data
Read Memory Array
1+
Write
X
FFh
Read
Addr
Data
Read Status Register
1+
Write
X
70h
Read
X
Status
Register
Read Electronic Signature
1+
Write
X
90h
Read
Signature
Addr (2)
Signature
Read CFI Query
1+
Write
55h
98h
Read
CFI Addr
Query
Block Erase
2
Write
X
20h
Write
Block
Addr
D0h
Chip Erase
2
Write
X
80h
Write
X
D0h
Program
2
Write
X
40h or
10h
Write
Addr
Data
Input
Double Word Program(3)
3
Write
X
30h
Write
Addr 1
Data
Input
Write
Addr 2
Data
Input
Clear Status Register
1
Write
X
50h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Block Lock
2
Write
X
60h
Write
Block
Address
01h
Block Unlock
2
Write
X
60h
Write
Block
Address
D0h
Block Lock-Down
2
Write
X
60h
Write
Block
Address
2Fh
Protection Register
Program
2
Write
X
C0h
Write
Address
Data
Input
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