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參數(shù)資料
| 型號： | M28R400CTB120ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| 中文描述： | 4兆位（256Kb的x16插槽，引導(dǎo)塊）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 4/50頁 |
| 文件大?。?/td> | 755K |
| 代理商： | M28R400CTB120ZB1T |
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12/50
Pseudo Code for flowcharts for using the Program/
Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 64 bit user One-Time-Pro-
grammable (OTP) segment of the Protection Reg-
ister. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protec-
tion Register Program command.
s
The first bus cycle sets up the Protection
Register Program command.
s
The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Pro-
tection Lock Register protects bit 2 of the Protec-
tion Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see Figure 5, Se-
curity Block Memory Map). Attempting to program
a previously protected Protection Register will re-
sult in a Status Register error. The protection of
the Protection Register and/or the Security Block
is not reversible.
The Protection Register Program cannot be sus-
Register Program Flowchart and Pseudo Code,
for the flowchart for using the Protection Register
Program command.
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
s
The first bus cycle sets up the Block Lock
command.
s
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 9 shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Block Unlock Command
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to is-
sue the Blocks Unlock command.
s
The first bus cycle sets up the Block Unlock
command.
s
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 9 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP is
low, VIL. When WP is high, VIH, the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
s
The first bus cycle sets up the Block Lock
command.
s
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 9 shows the protection status
after issuing a Block Lock-Down command. Refer
to the section, Block Locking, for a detailed expla-
nation.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28R400CTB120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTB90ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTB90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CT-KGD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| M28R400CTT120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
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