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參數(shù)資料
| 型號： | M28F201-120N3TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 2 MB的256K × 8，芯片擦除閃存 |
| 文件頁數(shù)： | 17/21頁 |
| 文件大?。?/td> | 179K |
| 代理商： | M28F201-120N3TR |
ORDERING INFORMATION SCHEME
Operating Voltage
F
5V
Speed
-70
70 ns
-90
90 ns
-120
120 ns
-150
150 ns
Power Supplies
blank V
CC
±
10%
X
V
CC
±
5%
Package
K
PLCC32
N
TSOP32
8 x 20 mm
Option
Reverse
Pinout
R
TR
Tape & Reel
Packing
Temperature Range
0 to 70
°
C
3
–40 to 125
°
C
6
–40 to 85
°
C
1
Example:
M28F201
-70 X
N
1 TR
Devices are shipped from the factory withthe memory content erased (to FFh).
For alist of availableoptions(Speed,Package,etc...) orforfurtherinformationonanyaspectof thisdevice,
pleasecontact the SGS-THOMSON Sales Office nearestto you.
17/21
M28F201
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F201-120N6R | Triple 3-Input Positive-NOR Gates 14-PDIP 0 to 70 |
| M28F201-120N6TR | 2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120XK1TR | 9-Bit Parity Generators/Checkers 14-SOIC 0 to 70 |
| M28F201-120XK6TR | 9-Bit Parity Generators/Checkers 14-SOIC 0 to 70 |
| M28F201-120XN1TR | 9-Bit Parity Generators/Checkers 14-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F201-120N6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120XK1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120XK1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120XK3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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