參數(shù)資料
型號: M28F201-120K6R
廠商: 意法半導(dǎo)體
英文描述: Triple 3-Input Positive-NOR Gates 14-SOIC 0 to 70
中文描述: 2 MB的256K × 8,芯片擦除閃存
文件頁數(shù): 13/21頁
文件大?。?/td> 179K
代理商: M28F201-120K6R
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Figure9. Erase Set-up and Erase VerifyCommands Waveforms, E Controlled
13/21
M28F201
相關(guān)PDF資料
PDF描述
M28F201-120K6TR 2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N1R 2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N1TR 2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N3R 2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N3TR 2 Mb 256K x 8, Chip Erase FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28F201-120K6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N1R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N3R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY
M28F201-120N3TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY