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參數(shù)資料
| 型號(hào)： | M28F101-120XP6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Octal Buffers/Drivers With 3-State Outputs 20-PDIP 0 to 70 |
| 中文描述： | 1 MB的128K的× 8，芯片擦除閃存 |
| 文件頁(yè)數(shù)： | 1/23頁(yè) |
| 文件大小： | 197K |
| 代理商： | M28F101-120XP6 |
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M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
April 1997
1/23
AI00666B
17
A0-A16
W
DQ0-DQ7
VPP
VCC
M28F101
G
E
VSS
8
Figure 1. Logic Diagram
5V
±
10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FASTACCESS TIME: 70ns
BYTEPROGRAMING TIME: 10
μ
s typical
ELECTRICALCHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
– Stand-byCurrent: 100
μ
Amax
10,000ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTPCOMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– DeviceCode: 07h
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganisedas128Kbytesof8bits.It usesacommand
register architectureto select the operating modes
and thus provides a simple microprocessor inter-
face.The M28F101FLASHMemory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speedmicroprocessor systems.
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
PLCC32 (K)
32
1
PDIP32 (P)
TSOP32 (N)
8 x 20 mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28F101-150K1 | Octal Buffers/Drivers With 3-State Outputs 20-PDIP 0 to 70 |
| M28F101-150K3 | Octal Buffers/Drivers With 3-State Outputs 20-SO 0 to 70 |
| M28F101-90K6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90N3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90N6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F101-150K1 | 制造商:STMicroelectronics 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| M28F101-150K3 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-150K6 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-150K6TR | 制造商:STMicroelectronics 功能描述:128K X 8 FLASH 12V PROM, 150 ns, PQCC32 |
| M28F101-150N1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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