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參數(shù)資料
| 型號： | M28F101-100N6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除閃存 |
| 文件頁數(shù)： | 4/23頁 |
| 文件大?。?/td> | 197K |
| 代理商： | M28F101-100N6 |
Command
Cycles
1st Cycle
2nd Cycle
Operation
A0-A16
DQ0-DQ7
Operation
A0-A16
DQ0-DQ7
Read
1
Write
X
00h
Electronic
Signature
(2)
2
Write
X
90h
Read
00000h
20h
Read
00001h
07h
Setup Erase/
2
Write
X
20h
Erase
Write
X
20h
Erase Verify
2
Write
A0-A16
A0h
Read
X
Data Output
Setup Program/
2
Write
X
40h
Program
Write
A0-A16
Data Input
Program Verify
2
Write
X
C0h
Read
X
Data Output
Reset
2
Write
X
FFh
Write
X
FFh
Notes:
1. X = V
or V
.
2. Refer also to the Electronic Signaturetable.
Table 5. Commands
(1)
Identifier
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Hex Data
Manufacturer’s Code
V
IL
0
0
1
0
0
0
0
0
20h
Device Code
V
IH
0
0
0
0
0
1
1
1
07h
Table 4. Electronic Signature
V
PP
Operation
E
G
W
A9
DQ0 - DQ7
Read Only
V
PPL
Read
V
IL
V
IL
V
IH
A9
Data Output
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Electronic Signature
V
IL
V
IL
V
IH
V
ID
Codes
Read/Write
(2)
V
PPH
Read
V
IL
V
IL
V
IH
A9
Data Output
Write
V
IL
V
IH
V
IL
Pulse
A9
Data Input
Output Disable
V
IL
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Notes:
1. X = V
or V
.
2. Refer also tothe Command table.
Table 3. Operations
(1)
4/23
M28F101
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F101-100P1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100P3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100P6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XK1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XK3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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