參數(shù)資料
型號(hào): M28C256-15WNS1T
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
中文描述: 256千位(的32KB × 8)與軟件數(shù)據(jù)保護(hù)并行的EEPROM
文件頁(yè)數(shù): 3/21頁(yè)
文件大小: 132K
代理商: M28C256-15WNS1T
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(2)
– 40 to 85
°
C
T
STG
Storage TemperatureRange
– 65 to 150
°
C
V
CC
Supply Voltage
– 0.3 to 6.5
V
V
IO
Input/Output Voltage
– 0.3 to V
CC
+0.6
V
V
I
Input Voltage
– 0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(3)
4000
V
Notes:
1. Except for therating ”O(jiān)perating Temperature Range”, stresses above those listed in theTable ”AbsoluteMaximum Ratings” may
cause permanent damage to the device. These are stress ratings only andoperation of the device at these orany other conditions
above those indicated in the Operating sections of this specification is not implied.Exposure toAbsolute Maximum Rating
conditions for extended periods may affect device reliability.Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Depends on range.
3. 100pF through 1500
; MIL-STD-883C, 3015.7
Table2. Absolute MaximumRatings
(1)
AI01697
ADDRESS
LATCH
A6-A14
(Page Address)
X
CONTROL LOGIC
256K ARRAY
ADDRESS
LATCH
A0-A5
Y DECODE
VPPGEN
RESET
SENSE AND DATA LATCH
I/O BUFFERS
E
G
W
PAGE
LOAD
TIMER STATUS
TOGGLE BIT
DATA POLLING
DQ0-DQ7
Figure 3. Block Diagram
3/21
M28256
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