參數(shù)資料
型號(hào): M28C17-90WK1TR
廠商: 意法半導(dǎo)體
元件分類: 保險(xiǎn)絲
英文描述: Fuses, 8A 250V T IEC GLASS 5X20
中文描述: 16千位2K × 8并行EEPROM,帶有軟件數(shù)據(jù)保護(hù)
文件頁數(shù): 7/17頁
文件大?。?/td> 131K
代理商: M28C17-90WK1TR
7/17
M28C16B, M28C17B
Table 6A. Read Mode DC Characteristics for M28CxxB (5V range)
(T
A
= 0 to 70 °C or -40 to 85 °C; V
CC
= 4.5 to 5.5 V)
Symbol
Parameter
Note: 1. All inputs and outputs open circuit.
Table 6B. Read Mode DC Characteristics for M28CxxB-W (3V range)
(T
A
= 0 to 70 °C or -40 to 85 °C; V
CC
= 2.7 to 3.6 V)
Symbol
Parameter
Note: 1. All inputs and outputs open circuit.
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0 V
V
IN
V
CC
10
μA
I
LO
Output Leakage Current
0 V
V
OUT
V
CC
10
μA
I
CC
1
Supply Current (TTL inputs)
E = V
IL
, G = V
IL
, f = 5 MHz
30
mA
Supply Current (CMOS inputs)
E = V
IL
, G = V
IL
, f = 5 MHz
25
mA
I
CC1
1
Supply Current (Stand-by) TTL
E = V
IH
1
mA
I
CC2
1
Supply Current (Stand-by) CMOS
E > V
CC
- 0.3V
100
μA
V
IL
Input Low Voltage
-0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= -400 μA
2.4
V
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
0 V
V
IN
V
CC
10
μA
I
LO
Output Leakage Current
0 V
V
OUT
V
CC
10
μA
I
CC
1
Supply Current (CMOS inputs)
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.3V
8
mA
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.6V
10
mA
I
CC2
1
Supply Current (Stand-by) CMOS
E > V
CC
- 0.3V
20
μA
V
IL
Input Low Voltage
-0.3
0.6
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA
0.2 V
CC
V
V
OH
Output High Voltage
I
OH
= -400 μA
0.8 V
CC
V
cessive Write operations, up to t
WLQ5H
(defined in
Table 10A). The DQ5 line is held low to show
when this timer is running (hence showing that the
device has received one write operation, and is
waiting for the next). The DQ5 line is held high
when the counter has overflowed (hence showing
that the device is now starting the internal write to
the memory array).
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