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參數(shù)資料
| 型號： | M28C16-90K6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | EEPROM |
| 英文描述： | 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| 中文描述： | 16K的2K × 8的并行EEPROM，帶有軟件數(shù)據(jù)保護 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 129K |
| 代理商： | M28C16-90K6T |
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table 5. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz )
Symbol
Parameter
TestCondition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
LO
Output Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
CC(1)
Supply Current (TTL inputs)
E = V
IL
, G = V
IL
, f = 5 MHz
30
mA
Supply Current (CMOS inputs)
E = V
IL
, G = V
IL
, f = 5 MHz
25
mA
I
CC1(1)
I
CC2(1)
Supply Current (Standby) TTL
E = V
IH
1
mA
Supply Current (Standby) CMOS
E > V
CC
–0.3V
100
μ
A
V
IL
Input Low Voltage
– 0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
Note:
1. All I/O’s open circuit.
Table 6. Read Mode DC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5V)
Symbol
Parameter
Min
Max
Unit
t
PUR
Time Delay to Read Operation
1
μ
s
t
PUW
Time Delay to Write Operation (once V
CC
≥
4.5V
)
10
ms
V
WI
Write Inhibit Threshold
3.0
4.2
V
Note:
1. Sampled only, not 100% tested.
Table 7. Power Up Timing
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 4.5Vto 5.5V)
Input Rise and Fall Times
≤
20ns
Input Pulse Voltages
0.4V to 2.4V
Input and Output Timing Ref. Voltages
0.8V to 2.0V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Table 4. ACMeasurement Conditions
AI00826
2.4V
0.4V
2.0V
0.8V
Figure7. AC Testing Input Output Waveforms
AI01129
1.3V
OUT
CL= 30pF
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 8. AC Testing EquivalentLoad Circuit
6/18
M28C16
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