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參數(shù)資料
| 型號： | M28C16-20WMS6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Kbit 2Kb x8 Parallel EEPROM |
| 中文描述： | 16千位2KB的x8并行的EEPROM |
| 文件頁數(shù)： | 10/19頁 |
| 文件大?。?/td> | 134K |
| 代理商： | M28C16-20WMS6 |
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVWL
t
AS
Address Validto Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Validto Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output EnableHigh to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output EnableHigh to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
200
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
200
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
200
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to OutputEnable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to WriteEnable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
200
ns
t
WLWH
tWP
Write Enable Low to Write Enable High
200
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.4
50
μ
s
t
WHRH
t
WC
Write Cycle Time
5
ms
t
WHRL
t
DB
Write Enable High to Ready/Busy Low
Note 1
250
ns
t
EHRL
t
DB
Chip Enable High to Ready/Busy Low
Note 1
250
ns
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Note
: 1.With a 3.3 k
external pull-up resistor.
Table 13. Write Mode AC Characteristicsfor M28C16-W
(T
A
= –40to 85
°
C, V
CC
=
2.7V to 3.6V)
10/19
M28C16A, M28C17A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28C16-20WBS6 | 16 Kbit 2Kb x8 Parallel EEPROM |
| M28C16-20NS6 | 16 Kbit 2Kb x8 Parallel EEPROM |
| M28C16-20MS6 | 16 Kbit 2Kb x8 Parallel EEPROM |
| M28C16-20KA6 | 16 Kbit 2Kb x8 Parallel EEPROM |
| M28C16-20BS6 | 16 Kbit 2Kb x8 Parallel EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28C16-20WNS6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x8 Parallel EEPROM |
| M28C16-250K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-250K6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-250MS1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
| M28C16-250MS6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
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