參數(shù)資料
型號: M28C16-120K6T
廠商: 意法半導(dǎo)體
元件分類: EEPROM
英文描述: 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
中文描述: 16K的2K × 8的并行EEPROM,帶有軟件數(shù)據(jù)保護(hù)
文件頁數(shù): 8/18頁
文件大小: 129K
代理商: M28C16-120K6T
Symbol
Alt
Parameter
TestCondition
Min
Max
Unit
t
AVWL
t
AS
Address Validto Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Validto Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output EnableHigh to Write Enable
Low
E = V
IL
0
ns
t
GHEL
t
OES
Output EnableHigh to Chip EnableLow
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
50
ns
t
ELAX
t
AH
Chip EnableLow toAddress Transition
50
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μ
s
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μ
s
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
50
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable
Low
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to WriteEnable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
50
ns
t
WLWH1
t
WP
Write Enable Low to Write EnableHigh
50
ns
t
WHWH
t
BLC
Byte Load Repeat Cycle Time
0.15
100
μ
s
t
WHRH
t
WC
Write Cycle Time
3
ms
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
Table 9. Write Mode AC Characteristics
(T
A
= 0 to70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5V)
8/18
M28C16
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