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參數(shù)資料
| 型號： | M27W800-120B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8或512KB × 16低壓紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | M27W800-120B6TR |
M27W800
8/15
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
CC
±1
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
3.5
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μs
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μs
t
VPHAV
t
VPS
V
PP
High to Address Valid
2
μs
t
VCHAV
t
VCS
V
CC
High to Address Valid
2
μs
t
ELEH
t
PW
Chip Enable Program Pulse Width
45
55
μs
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μs
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μs
t
GLQV
t
OE
Output Enable Low to Output Valid
120
ns
t
GHQZ
(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Programming
The M27W800 has been designed to be fully com-
patible with the M27C800 and has the same elec-
tronic signature. As a result the M27W800 can be
programmed as the M27C800 on the same pro-
gramming equipments applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO III algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27W800
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’ to a ’1’ is by die exposure to ul-
traviolet light (UV EPROM). The M27W800 is in
the programming mode when V
PP
input is at
12.5V, G is at V
IH
and E is pulsed to V
IL
. The data
to be programmed is applied to 16 bits in parallel
to the data output pins. The levels required for the
address and data inputs are TTL. V
CC
is specified
to be 6.25V ± 0.25V.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W800-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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