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參數(shù)資料
| 型號(hào)： | M27W400-120XK6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 4兆位512KB的x8或256Kb的x16低壓紫外線可擦寫可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | M27W400-120XK6TR |
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M27W400
8/15
Figure 7. BYTE Transition AC Waveforms
Note: Chip Enable (E) and Output Enable (G) = V
IL
.
AI01638B
tAXQX
tBHQV
A0-A17
BYTEVPP
tAVQV
tBLQX
tBLQZ
VALID
Hi-Z
A–1
DATA OUT
DATA OUT
VALID
Q0-Q7
Q8-Q15
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
CC
±1
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
3.5
V
V
ID
A9 Voltage
11.5
12.5
V
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27W400 are in the ’1’
state. Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposition to ultravio-
let light (UV EPROM). The M27W400 is in the pro-
gramming mode when V
PP
input is at 12.5V, G is
at V
IH
and E is pulsed to V
IL
. The data to be pro-
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W400-120XB6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XF6TR | Spring Contact Probe; Current Rating:5A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No |
| M27W400 | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100B6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100F6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W401 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401-100B6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W401-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W401-100F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM |
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