參數(shù)資料
型號(hào): M27W400-120B6TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
中文描述: 4兆位512KB的x8或256Kb的x16低壓紫外線可擦寫(xiě)可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器
文件頁(yè)數(shù): 6/15頁(yè)
文件大?。?/td> 140K
代理商: M27W400-120B6TR
M27W400
6/15
Table 8. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 2.7 to 3.6V; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed measurement conditions.
Symbol
Alt
Parameter
Test Condition
M27W400
Unit
-100
(3)
-120
V
CC
= 3.0
to 3.6V
V
CC
= 2.7
to 3.6V
V
CC
= 2.7 to
3.6V
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output
Valid
E = V
IL
, G = V
IL
80
100
120
ns
t
BHQV
t
ST
BYTE High to Output
Valid
E = V
IL
, G = V
IL
80
100
120
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
80
100
120
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
40
50
60
ns
t
BLQZ
(2)
t
STD
BYTE Low to Output Hi-Z
E = V
IL
, G = V
IL
40
50
60
ns
t
EHQZ
(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
40
0
50
0
60
ns
t
GHQZ
(2)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
0
40
0
50
0
60
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
5
5
5
ns
t
BLQX
t
OH
BYTE Low to Output
Transition
E = V
IL
, G = V
IL
5
5
5
ns
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