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參數(shù)資料
| 型號： | M27W256-80N6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 256千位的32KB × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大?。?/td> | 101K |
| 代理商： | M27W256-80N6TR |
7/15
M27W256
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Parameter
Note: V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. ProgrammingMode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V
Symbol
Alt
Note: V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –1mA
3.6
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μ
s
t
QVEL
t
DS
Input Validto Chip Enable Low
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse Width
95
105
μ
s
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address Transition
0
ns
Programming
The M27W256 hasbeen designedto be fully com-
patible with the M27C256B and has the same
electronic signature. As a result the M27W256 can
be programmed as the M27C256B on the same
programming equipments applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO II algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27W256
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’to a ’1’is by die exposure to ul-
traviolet light (UV EPROM). The M27W256 is in
the programming mode when V
PP
input is at
12.75V, G is at V
IH
and E is pulsed to V
IL
. Thedata
to be programmed is applied to 8 bits inparallel to
the data output pins. The levels required for the
address and data inputs are TTL. V
CC
is specified
to be 6.25 V
±
0.25 V.
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| M27W256B-80F6 | 功能描述:可擦除可編程ROM 256K (32Kx8) 80ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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| M27W400-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
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