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參數(shù)資料
| 型號： | M27W256-80K6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Dual 1-of-4 Data Selectors/Multiplexers 16-SOIC 0 to 70 |
| 中文描述： | 256千位的32KB × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大小： | 101K |
| 代理商： | M27W256-80K6TR |
M27W256
8/15
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows to pro-
gram the whole array with a guaranteed margin, in
a typical time of 3.5 seconds. Programming with
PRESTO II involves the application of a sequence
of 100
μ
s program pulses to each byte until a cor-
rect verify occurs (see Figure 7). During program-
ming and verify operation, a MARGIN MODE
circuit is automatically activated in order to guar-
antee that each cell is programmed with enough
margin. Nooverprogram pulse is applied since the
verify in MARGIN MODE at V
CC
much higher than
3.6V provides necessary margin to each pro-
grammed cell.
Program Inhibit
Programming of multiple M27W256s in parallel
with different data is also easily accomplished. Ex-
cept for E, all likeinputs including G of the parallel
M27W256 may be common. ATTL low level pulse
applied to a M27W256’s E input, with V
PP
at12.75
V, will program that M27W256. A highlevel Einput
inhibits the other M27W256s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that theywere correct-
ly programmed. The verify is accomplished with G
at V
IL
, E at V
IH
, V
PP
at 12.75V and V
CC
at 6.25V.
Figure 6. Programming and Verify Modes AC Waveforms
tAVEL
VALID
AI00759
A0-A14
Q0-Q7
VPP
VCC
G
DATA IN
DATA OUT
E
tQVEL
tVPHEL
tVCHEL
tEHQX
tELEH
tGLQV
tQXGL
tGHQZ
tGHAX
PROGRAM
VERIFY
Figure 7. Programming Flowchart
AI00707D
n = 0
Last
Addr
VERIFY
P = 100
μ
s Pulse
++n
= 25
++ Addr
VCC= 6.25V, VPP= 12.75V
FAIL
CHECK ALL WORDS
1st: VCC= 5V
2nd: VCC= 2.7V
YES
NO
YES
NO
YES
NO
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W256-80N6TR | 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-120K6TR | 3-Line To 8-Line Decoders/Demultiplexers 16-SO 0 to 70 |
| M27W400-100XK6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XK6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XB6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W256-80N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256B-80F6 | 功能描述:可擦除可編程ROM 256K (32Kx8) 80ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27W400 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
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