參數(shù)資料
型號(hào): M27W256-80B6TR
廠商: 意法半導(dǎo)體
英文描述: 1-of-8 Data Selectors/Multiplexers 16-SO 0 to 70
中文描述: 256千位的32KB × 8低壓紫外線可擦寫可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器
文件頁(yè)數(shù): 5/15頁(yè)
文件大?。?/td> 101K
代理商: M27W256-80B6TR
5/15
M27W256
Table 7. Read Mode DC Characteristics
(1)
(T
A
= –40 to 85
°
C; V
CC
= 2.7V to 3.6V; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8. Read Mode AC Characteristics
(1)
(T
A
= –40 to 85
°
C; V
CC
= 2.7V to 3.6V; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±
10
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±
10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz,
V
CC
3.6V
15
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V,
V
CC
3.6V
15
μ
A
I
PP
Program Current
V
PP
= V
CC
100
μ
A
V
IL
Input Low Voltage
–0.6
0.2 V
CC
V
V
IH(2)
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
Symbol
Alt
Parameter
Test
Condition
M27W256
Unit
-80
(3)
-100
(-120/-150/-200)
V
CC
= 3.0V to 3.6V V
CC
= 2.7V to 3.6V V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
,
G = V
IL
70
80
100
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
70
80
100
ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E = V
IL
40
50
60
ns
t
EHQZ(2)
t
DF
Chip Enable High
to Output Hi-Z
G = V
IL
0
40
0
50
0
60
ns
t
GHQZ(2)
t
DF
Output EnableHigh
to Output Hi-Z
E = V
IL
0
40
0
50
0
60
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
,
G = V
IL
0
0
0
ns
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