參數(shù)資料
型號(hào): M27W202-100F6TR
廠商: 意法半導(dǎo)體
英文描述: 2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM
中文描述: 2兆位128KB的x16低壓紫外線可擦寫可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器
文件頁數(shù): 1/15頁
文件大?。?/td> 103K
代理商: M27W202-100F6TR
1/15
April 2000
M27W202
2 Mbit (128Kb x16) Low Voltage UV EPROM and OTP EPROM
I
2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
I
ACCESS TIME:
– 80ns at V
CC
= 3.0V to 3.6V
– 100ns at V
CC
= 2.7V to 3.6V
I
LOW POWER CONSUMPTION:
– Active Current 20mA at 5MHz
– Standby Current 15
μ
A
I
PIN COMPATIBLE with M27C202
I
PROGRAMMING TIME: 100
μ
s/word
I
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 001Ch
DESCRIPTION
The M27W202 is a low voltage 2 Mbit EPROM of-
fered in the two range UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage and is organised as 131,072 by
16 bits.
The M27W202 operates in the read mode with a
supply voltageas low as 2.7V at –40 to 85
°
C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W201 is offered in PDIP40, PLCC44 and
TSOP40 (10 x 14 mm) packages.
Figure 1. Logic Diagram
AI02730
17
A0-A16
P
Q0-Q15
VPP
VCC
M27W202
G
E
VSS
16
1
40
1
40
PDIP40 (B)
PLCC44 (K)
TSOP40 (N)
10 x 14 mm
FDIP40W (F)
相關(guān)PDF資料
PDF描述
M27W202-100K6TR 2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM
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