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參數(shù)資料
| 型號(hào)： | M27W201-80K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Triple 3-Input Positive-AND Gates 14-PDIP 0 to 70 |
| 中文描述： | 2兆位的256Kb × 8低壓紫外線可擦寫可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | M27W201-80K |
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M27W201
8/16
Figure 7. Programming Flowchart
AI00715D
n = 0
Last
Addr
VERIFY
P = 100
μ
s Pulse
++n
= 25
++ Addr
VCC = 6.25V, VPP = 12.75V
FAIL
CHECK ALL BYTES
1st: VCC = 5V
2nd: VCC = 2.7V
YES
NO
YES
NO
YES
NO
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 26.5 seconds. Pro-
gramming with PRESTO II consists of applying a
sequence of 100μs program pulses to each byte
until a correct verify occurs (see Figure 7). During
programming and verify operation, a MARGIN
MODE circuit is automatically activated in order to
guarantee that each cell is programmed with
enough margin. No overprogram pulse is applied
since the verify in MARGIN MODE at V
CC
much
higher than 3.6V, provides the necessary margin
to each programmed cell.
Program Inhibit
Programming of multiple M27W201s in parallel
with different data is also easily accomplished. Ex-
cept for E, all like inputs including G of the parallel
M27W201 may be common. A TTL low level pulse
applied to a M27W201's P input, with E low and
V
PP
at 12.75V, will program that M27W201. A high
level E input inhibits the other M27W201s from be-
ing programmed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correct-
ly programmed. The verify is accomplished with E
and G at V
IL
, P at V
IH
, V
PP
at 12.75V and V
CC
at
6.25V.
Figure 6. Programming and Verify Modes AC Waveforms
tAVPL
VALID
AI00720
A0-A17
Q0-Q7
VPP
VCC
P
G
DATA IN
DATA OUT
E
tQVPL
tVPHPL
tVCHPL
tPHQX
tPLPH
tGLQV
tQXGL
tELPL
tGHQZ
tGHAX
PROGRAM
VERIFY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W201-100NZ6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-120NZ6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-80NZ6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-100N6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-100K6TR | Test Spring Probe; Current Rating:3A; Leaded Process Compatible:Yes; Length:0.060"; Peak Reflow Compatible (260 C):No; Tip/Nozzle Style:90 Concave RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W201-80K6 | 功能描述:可擦除可編程ROM 2M (256Kx8) 80ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27W201-80K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-80N6 | 功能描述:可擦除可編程ROM 2M (256Kx8) 80ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27W201-80N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-80NZ6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
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