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參數(shù)資料
| 型號： | M27W201-100F6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 2兆位的256Kb × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 170K |
| 代理商： | M27W201-100F6TR |
7/16
M27W201
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
CC
±10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μs
t
QVPL
t
DS
Input Valid to Program Low
2
μs
t
VPHPL
t
VPS
V
PP
High to Program Low
2
μs
t
VCHPL
t
VCS
V
CC
High to Program Low
2
μs
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μs
t
PLPH
t
PW
Program Pulse Width
95
105
μs
t
PHQX
t
DH
Program High to Input Transition
2
μs
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μs
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a ‘0’ to a ‘1’ is by die exposure to ultraviolet
light (UV EPROM). The M27W201 is in the pro-
gramming mode when V
PP
input is at 12.75V, E is
at V
IL
and P is pulsed to V
IL
. The data to be pro-
grammed is applied to 8 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V.
Programming
The M27W201 has been designed to be fully com-
patible with the M27C2001 and has the same elec-
tronic signature. As a result the M27W201 can be
programmed as the M27C2001 on the same pro-
gramming equipment applying 12.75V on V
PP
and
6.25V on V
CC
by the use of the same PRESTO II
algorithm.
When delivered (and after each ‘1’s erasure for UV
EPROM), all bits of the M27W201 are in the '1'
state.Data is introduced by selectively program-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W201-100B6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-200NZ6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-150NZ6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-120N6TR | 1-of-8 Data Selectors/Multiplexers 16-SOIC 0 to 70 |
| M27W256-150B6TR | 1-of-8 Data Selectors/Multiplexers 16-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W201-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-120NZ6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W201-150B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-150F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
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