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參數(shù)資料
| 型號： | M27W016-100B1T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
| 中文描述： | 16兆1兆x16 3V電源FlexibleROMTM記憶 |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 438K |
| 代理商： | M27W016-100B1T |
M27W016
10/26
Start Address), that indicates to the PC that the
Program Phase has to continue. A0 to A16 are
‘don’t care’.
3. Finally, after all Words have been programmed,
a Bus Write operation (the (n+1)
th
) with a Final
Address, FA (A17 or a higher address pin
different from the Start Address), ends the
Program Phase.
The memory is now set to enter the Verify Phase.
Verify Phase.
The Verify Phase is similar to the
Program Phase in that all Words must be resent to
the memory for them to be checked against the
programmed data.
Before any Bus Write Operation of the Verify
Phase, the Status Register must be read in order
to check that the PC is ready for the next operation
or if the reprogram of the location has failed (see
Table 6 and Figure 8).
Three successive steps are required to execute
the Verify Phase of the command:
1. The first Bus Write operation of the Verify Phase
latches the Start Address and the Word to be
verified.
2. Each subsequent Bus Write operation latches
the next Word to be verified and automatically
increments the internal Address Bus. As in the
Program Phase, it is not necessary to provide
the address of the location to be programmed
but only a Continue Address, CA (A17 to A19
equal to the Start Address).
3. Finally, after all Words have been verified, a Bus
Write cycle with a Final Address, FA (A17 or a
higher address pin different from the Start
Address) ends the Verify Phase.
Exit Phase.
After the Verify Phase ends, the Sta-
tus Register must be read to check if the command
has successfully completed or not (see Table 6
and Figure 8).
If the Verify Phase is successful, the memory re-
turns to Read mode and DQ6 stops toggling.
If the PC fails to reprogram a given location, the
Verify Phase terminates, DQ6 continues toggling
and error bit DQ5 is set in the Status Register. If
the error is due to a V
PP
failure DQ4 is also set.
When the operation fails a Read/Reset command
must be issued to return the device to Read mode.
During the Multiple Word Program operation the
memory will ignore all commands. It is not possible
to issue any command to abort or pause the oper-
ation. Typical program times are given in Table 5.
Bus Read operations during the program opera-
tion will output the Status Register on the Data In-
puts/Outputs. See the section on the Status
Register for more details.
Note that the Multiple Word Program command
cannot change a bit set to ’0’ back to ’1’.
相關PDF資料 |
PDF描述 |
|---|---|
| M27W032 | 32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory |
| M27W032-110N1T | 32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory |
| M27W032-110M1T | 32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory |
| M27W032-100N1T | 32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory |
| M27W032-100M1T | 32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M27W016-100M1 | 制造商:STMicroelectronics 功能描述: |
| M27W016-100M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
| M27W016-100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
| M27W016-100S1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
| M27W016-110B1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
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