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參數(shù)資料
| 型號： | M27V801-200N1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆x8低壓紫外線EPROM和檢察官辦公室存儲器 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 108K |
| 代理商： | M27V801-200N1TR |
M27V801
4/16
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs requirecareful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edgesof E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1
μ
F ceramic
capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
μ
F bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. Thepurposeof the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤
10ns
≤
20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Figure 3. Testing Input Output Waveform
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 4. AC Testing Load Circuit
AI01823B
1.3V
OUT
CL
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 6. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V801-200N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V801-200P1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27V801-200P6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W016 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory |
| M27W016-100B1 | 功能描述:可擦除可編程ROM 16M (1Mx16) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
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