參數(shù)資料
型號: M27V800-120XF1TR
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM
中文描述: 8兆1兆x8或512KB的x16低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器
文件頁數(shù): 6/16頁
文件大?。?/td> 108K
代理商: M27V800-120XF1TR
M27V800
6/16
Figure 5. Word-Wide Read Mode AC Waveforms
Note: BYTEV
PP
= V
IH
.
AI01596B
tAXQX
tEHQZ
A0-A18
E
G
Q0-Q15
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V800
Unit
-100
-120
-150
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
, G = V
IL
100
120
150
ns
t
BHQV
t
ST
BYTE High to Output
Valid
E = V
IL
, G = V
IL
100
120
150
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
100
120
150
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
50
60
70
ns
t
BLQZ(2)
t
STD
BYTE Low to Output
Hi-Z
E = V
IL
, G = V
IL
45
50
60
ns
t
EHQZ(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
45
0
50
0
60
ns
t
GHQZ(2)
t
DF
Output EnableHigh to
Output Hi-Z
E = V
IL
0
45
0
50
0
60
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
5
5
5
ns
t
BLQX
t
OH
BYTE Low to Output
Transition
E = V
IL
, G = V
IL
5
5
5
ns
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