參數(shù)資料
型號(hào): M27V512-100K1TR
廠商: 意法半導(dǎo)體
英文描述: 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
中文描述: 512千位64Kb的x8低壓紫外線EPROM和檢察官辦公室存儲(chǔ)器
文件頁數(shù): 5/16頁
文件大?。?/td> 108K
代理商: M27V512-100K1TR
5/16
M27V512
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±
10
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±
10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
3.6V
10
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V, V
CC
3.6V
10
μ
A
I
PP
Program Current
V
PP
= V
CC
10
μ
A
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
– 0.7V
V
Symbol
Alt
Parameter
Test Condition
M27V512
Unit
-100
(3)
-120
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
100
120
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
100
120
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
45
45
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
30
0
35
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
30
0
35
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
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PDF描述
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