參數(shù)資料
型號: M27V102-90N6TR
廠商: 意法半導(dǎo)體
英文描述: 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM
中文描述: 1兆位64Kb的× 16低壓紫外線存儲器和OTP存儲器
文件頁數(shù): 6/15頁
文件大?。?/td> 116K
代理商: M27V102-90N6TR
Symbol
Alt
Parameter
Test Condition
M27V102
Unit
-120
-150
-200
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
120
150
200
ns
t
ELQV
t
CE
Chip Enable Low to OutputValid
G = V
IL
120
150
200
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
50
60
90
ns
t
EHQZ
(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
40
0
50
0
70
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
40
0
50
0
70
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
0
ns
Notes:
1. V
must be applied simultaneouslywith or before V
PP
and removed simultaneously with or afterV
PP.
2. Sampled only,not 100% tested.
Table8B. ReadMode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%;V
PP
= V
CC
)
AI00705B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q15
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Figure5. Read Mode AC Waveforms
Programming
The M27V102has been designed to be fullycom-
patible with the M27C1024 and has the same
elecronic signature.As a result the M27V102 can
be programmed as the M27C1024 on the same
programming equipmentsapplying12.75V on V
PP
and6.25Von V
CC
bythe useof thesamePRESTO
II algorithm. When delivered (and after each ’1’s
erasure for UV EPROM), all bits of the M27V102
arein the’1’state.Dataisintroducedbyselectively
programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and’0’scan bepresentin thedata word. Theonly
way to change a ’0’ to a ’1’ is by die exposure to
ultraviolet light (UV EPROM). The M27V102 is in
the programming mode when V
PP
input is at
12.75V,E is atV
IL
and P is pulsedto V
IL
. The data
to be programmed is applied to 16 bits in parallel
to the data outputpins. Thelevelsrequired for the
addressand data inputs are TTL.V
CC
is specified
to be 6.25V
±
0.25V.
6/15
M27V102
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