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參數(shù)資料
| 型號： | M27V102-100F6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 1兆位64Kb的× 16低壓紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 116K |
| 代理商： | M27V102-100F6TR |
and G at V
IL
, P at V
IH
, V
PP
at 12.75V and V
CC
at
6.25V.
On-Board Programming
The M27V102 can be directly programmed in the
application circuit. See the relevant Application
NoteAN620.
ElectronicSignature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROMthat
will identify its manufacturerand type. This mode
is intended for use by programmingequipment to
automaticallymatchthe deviceto be programmed
withitscorrespondingprogrammingalgorithm.The
ES mode is functional in the 25
°
C
±
5
°
Cambient
temperaturerange that is required whenprogram-
ming the M27V102. To activatethe ESmode, the
programmingequipmentmustforce11.5Vto 12.5V
on addressline A9of theM27V102with V
PP
= V
CC
= 5V. Twoidentifierbytes maythenbe sequenced
fromthedeviceoutputsbytogglingaddresslineA0
fromV
IL
toV
IH
. All otheraddresslinesmustbe held
at V
IL
during Electronic Signature mode. Byte 0
(A0=V
IL
) represents the manufacturer code and
byte1 (A0=V
IH
) the device identifiercode. Forthe
STMicroelectronicsM27V102,thesetwoiden-tifier
bytes are given in Table 4 and can be read-out on
outputs Q0 to Q7. Note that the M27V102 and
M27C1024 have the same identifier bytes.
ERASUREOPERATION(appliestoUV EPROM)
TheerasurecharacteristicsoftheM27V102issuch
that erasure begins when the cells areexposed to
light with wavelengthsshorter than approximately
4000. Itshouldbe notedthat sunlightand some
type of fluorescentlamps have wavelengthsin the
3000-4000range.Researchshowsthatconstant
exposure to room level fluorescent lighting could
erase a typicalM27V102 in about 3 years, while it
wouldtakeapproximately1 weekto causeerasure
when exposed to direct sunlight. If the M27V102
is to be exposed to these types of lighting condi-
tions for extended periods of time, it is suggested
that opaque labels be put overthe M27V102 win-
dow to preventunintentionalerasure. The recom-
mended erasure procedure for the M27V102 is
exposure to short wave ultraviolet light which has
wavelength2537 . The integrated dose (i.e. UV
intensityx exposuretime) for erasure should be a
minimum of 15 W-sec/cm
2
. The erasure time with
this dosage is approximately 15 to 20 minutes
usingan ultravioletlampwith12000
μ
W/cm
2
power
rating. The M27V102 should be placed within 2.5
cm (1 inch) of the lamp tubes during the erasure.
Some lamps have a filter on their tubes which
shouldbe removed beforeerasure.
9/15
M27V102
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27V102-100K1TR | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100K6TR | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100N1TR | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100N6TR | TEST SOCKET FOR TERMINAL BLOCK |
| M27V102-120N1TR | 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V102-100K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-120B1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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