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參數(shù)資料
| 型號(hào)： | M27V101-90B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 1兆位的128KB × 8低壓紫外線可擦寫(xiě)可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 6/15頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | M27V101-90B6TR |
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M27V101
6/15
Figure 5. Read Mode AC Waveforms
AI00713
tAXQX
tEHQZ
DATA OUT
A0-A16
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= Vcc)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V201
Unit
-120
-150
-200
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output
Valid
E = V
IL
, G = V
IL
120
150
200
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
120
150
200
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
50
60
90
ns
t
EHQZ(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
40
0
50
0
70
ns
t
GHQZ(2)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
0
40
0
50
0
70
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
ns
Programming
The M27V101 has been designed to be fully com-
patible withthe M27C1001 and hasthe same elec-
tronic signature. As a result the M27V101 can be
programmed as the M27C1001 on the same pro-
gramming equipments applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO II algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27V101
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’ to a ’1’ is by die exposition to
ultraviolet light (UV EPROM). The M27V101 is in
the programming mode when V
PP
input is at
12.75V, E is at V
IL
andP is pulsed toV
IL
. The data
to be programmed is applied to 8 bits inparallel to
the data output pins. The levels required for the
address and data inputs are TTL. V
CC
is specified
to be 6.25V
±
0.25V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27V101-90F1TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90F6TR | 2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 |
| M27V101-90K1TR | 2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TSSOP -40 to 85 |
| M27V101-90K6TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90N6TR | 2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TVSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27V101-90F1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90F6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90K1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90K6TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-90N1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
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