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參數(shù)資料
| 型號： | M27C64A-10F6 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Kbit (8Kb x8) UV EPROM and OTP EPROM |
| 中文描述： | 64千位（8KB的× 8）紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 124K |
| 代理商： | M27C64A-10F6 |
DC and AC parameters
M27C64A
14/22
Table 7.
Table 8.
Read Mode DC Characteristics
(1)(2)
1.
T
A
= 0 to 70 °C or –40 to 85 °C: V
CC
= 5V ± 10%; V
PP
= V
CC
.
V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Maximum DC voltage on Output is V
CC
+0.5V.
Programming Mode DC Characteristics
(1)(2)
2.
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
±10
μA
I
LO
Output Leakage Current
±10
μA
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
30
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby)
CMOS
E > V
CC
– 0.2V
100
μA
I
PP
Program Current
V
PP
= V
CC
100
μA
V
IL
V
IH(3)
Input Low Voltage
–0.3
0.8
V
3.
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
Output High Voltage CMOS
I
OH
= –100μA
V
CC
–
0.7V
1.
T
A
= 25 °C; V
CC
= 6V ± 0.25V; V
PP
= 12.5V ± 0.25V.
V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2.
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
I
CC
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±10
μA
Supply Current
30
mA
I
PP
Program Current
E = V
IL
30
mA
V
IL
V
IH
Input Low Voltage
–0.3
0.8
V
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
V
ID
Output High Voltage TTL
I
OH
= –400μA
2.4
V
A9 Voltage
11.5
12.5
V
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