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參數(shù)資料
| 型號： | M27C4001-80N1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM |
| 中文描述： | 4兆位（512KB的× 8）紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 149K |
| 代理商： | M27C4001-80N1 |
DC and AC parameters
M27C4001
14/25
Table 6.
Table 7.
Table 8.
Capacitance
(1) (2)
1.
T
A
= 25 °C, f = 1 MHz.
Sampled only, not 100% tested.
2.
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Read Mode DC Characteristics
(1)
(2)
1.
T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 5% or 5V ± 10%; V
PP
= V
CC
V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP.
.
Maximum DC voltage on Output is V
CC
+0.5V.
Programming Mode DC Characteristics
(1) (2)
2.
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
±10
μ
A
I
LO
Output Leakage Current
±10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
30
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby)
CMOS
E > V
CC
– 0.2V
100
μ
A
I
PP
Program Current
V
PP
= V
CC
10
μ
A
V
IL
V
IH(3)
Input Low Voltage
–0.3
0.8
V
3.
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
I
OH
= –400
μ
A
I
OH
= –100
μ
A
0.4
V
V
OH
Output High Voltage TTL
2.4
V
Output High Voltage CMOS
V
CC
– 0.7V
V
1.
T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V.
V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2.
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
CC
±10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
I
OH
= –400
μ
A
0.4
V
V
OH
Output High Voltage TTL
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
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