參數(shù)資料
型號(hào): M27C160-120S1TR
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
中文描述: 16兆位的2Mb x8或1兆x16紫外線存儲(chǔ)器和OTP存儲(chǔ)器
文件頁(yè)數(shù): 1/19頁(yè)
文件大小: 153K
代理商: M27C160-120S1TR
1/19
January 2002
M27C160
16 Mbit (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM
I
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
I
ACCESS TIME: 50ns
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
16 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Standby Current 100μA
I
PROGRAMMING VOLTAGE: 12.5V ± 0.25V
I
PROGRAMMING TIME: 50μs/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B1h
DESCRIPTION
The M27C160 is a 16 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large data or program
storage and is organised as either 2 Mbit words of
8 bit or 1 Mbit words of 16 bit. The pin-out is com-
patible with a 16 Mbit Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C160 is offered in PDIP42, SDIP42, PLCC44
and SO44 packages.
44
1
1
42
1
42
FDIP42W (F)
SO44 (M)
PDIP42 (B)
PLCC44 (K)
SDIP42 (S)
1
42
Figure 1. Logic Diagram
AI00739B
20
A0-A19
BYTEVPP
Q0-Q14
VCC
M27C160
G
E
VSS
15
Q15A–1
相關(guān)PDF資料
PDF描述
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