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參數(shù)資料
| 型號： | M27C160-120K1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 110K |
| 代理商： | M27C160-120K1TR |
M27C160
10/16
On-Board Programming
The M27C160 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically matchthe device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°
C
±
5
°
C am-
bient temperaturerange that is required when pro-
gramming the M27C160. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C160, with V
PP
=V
CC
=5V. Twoidentifier bytes
may then be sequenced from the device outputs
by toggling address line A0 from V
IL
to V
IH
. All oth-
er address lines must be held at V
IL
during Elec-
tronic Signature mode.
Byte 0 (A0=V
IL
) represents themanufacturer code
and byte 1 (A0=V
IH
) the device identifier code. For
the STMicroelectronics M27C160, these two iden-
tifier bytes are given in Table 4 and can be read-
out on outputs Q0 to Q7.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C160 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C160 in
about 3 years, while it would takeapproximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C160 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labelsbeput over
the M27C160 windowto prevent unintentionalera-
sure. The recommended erasure procedure for
M27C160 is exposure to short wave ultraviolet
light which has a wavelength of 2537 . The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 30 W-sec/cm
2.
The erasure time with this dosage is approximate-
ly 30 to 40 minutes using an ultraviolet lamp with
12000
μ
W/cm
2
power rating. The M27C160
should be placed within 2.5cm (1 inch) of the lamp
tubes during the erasure. Somelamps have a filter
on their tubes which should be removed before
erasure.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27C160-150K1TR | 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
| M27C160-100K6TR | 16-Bit Transparent D-Type Flip-Flop |
| M27C160-90B6TR | 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
| M27C160-90F1TR | 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
| M27C160-90F6TR | 16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27C160-150F1 | 功能描述:可擦除可編程ROM DIP-42 2MX8 1MX16 RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C160-50F1 | 功能描述:可擦除可編程ROM 16 MBIT UV 可擦除可編程ROM RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C160-70XF1 | 功能描述:可擦除可編程ROM 2Mx8 or 1Mx16 70ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C160-90B1 | 功能描述:可擦除可編程ROM 2Mx8 or 1Mx16 90ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C160-90F1 | 功能描述:可擦除可編程ROM 2Mx8 or 1Mx16 90ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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