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參數(shù)資料
| 型號： | M27128A-25F1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NMOS 128K 16K x 8 UV EPROM |
| 中文描述： | NMOS管128K的16K的× 8紫外線存儲器 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 107K |
| 代理商： | M27128A-25F1 |
tAVPL
VALID
AI00772
A0-A13
Q0-Q7
VPP
VCC
P
G
DATA IN
DATA OUT
E
tQVPL
tVPHPL
tVCHPL
tPHQX
tPLPH
tGLQV
tQXGL
tELPL
tGHQZ
tGHAX
PROGRAM
VERIFY
Figure 6. Programming and Verify Modes AC Waveforms
AI00775B
n = 1
Last
Addr
VERIFY
P = 1ms Pulse
++n
> 25
++ Addr
VCC = 6V, VPP = 12.5V
FAIL
CHECK ALL BYTES
VCC = 5V, VPP 5V
YES
NO
YES
NO
YES
NO
P = 3ms Pulse by n
Figure 7. Programming Flowchart
continually monitored to determine when it has
been successfully programmed. A flowchart of the
M27128A Fast Programming Algorithm is shown
on the last page. The Fast Programming Algorithm
utilizes two different pulse types: initial and over-
program.
The duration of the initial P pulse(s) is 1ms, which
will then be followed by a longer overprogram pulse
of length 3ms by n (n is equal to the number of the
initial one millisecond pulses applied to a particular
M27128A location), before a correct verify occurs.
Up to 25 one-millisecond pulses per byte are pro-
vided for before the over program pulse is applied.
The entire sequence of program pulses and byte
verifications is performed at V
CC
= 6V and V
PP
=
12.5V. When the Fast Programming cycle has been
completed, all bytes should be compared to the
original data with V
CC
= 5 and V
PP
= 5V.
Program Inhibit
Programming of multiple M27128A’s in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including G) of the parallel
M27128A may be common. A TTL low pulse ap-
plied to a M27128A’s E input, with V
PP
= 12.5V, will
program that M27128A. A high level E input inhibits
the other M27128As from being programmed.
DEVICE OPERATION
(cont’d)
7/10
M27128A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27128A-25F6 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-2F1 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-2F6 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-30F1 | NMOS 128K 16K x 8 UV EPROM |
| M27128A-30F6 | NMOS 128K 16K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27128A-25F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 128K 16K x 8 UV EPROM |
| M27128A-2F1 | 功能描述:可擦除可編程ROM DISC BY STM 6/01 DIP-28 16KX8 200NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27128A-2F6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 128K 16K x 8 UV EPROM |
| M27128A-30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced 128K(16 x 8) UV Erasable PROM |
| M27128A-30F1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NMOS 128K 16K x 8 UV EPROM |
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