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參數(shù)資料
| 型號： | M25PX32 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 32/63頁 |
| 文件大?。?/td> | 394K |
| 代理商： | M25PX32 |
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Instructions
M25PX32
32/63
6.6
Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that
address, is shifted out on Serial Data output (DQ1), each bit being shifted out, at a
maximum frequency f
R
, during the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 13
.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) instruction. When the highest
address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip
Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ)
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 13.
Read Data Bytes (READ)
instruction sequence and data-out sequence
1.
Address bits A23 to A22 are Don’t care.
C
DQ0
AI13736
S
DQ1
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
7
0
High Impedance
Data Out 1
Instruction
24-bit address
0
MSB
MSB
2
39
Data Out 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PX32-VMP6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMP6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMW6E | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMW6F | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PX32-VMF6E | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PX32SOVZM6E | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
| M25PX32SOVZM6F | 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| M25PX32-VMF3EB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
| M25PX32-VMF3FB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PX32-VMF6E | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 32Mbit 4M x 8bit 8ns 16-Pin SO W Tube 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
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