- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358974 > M25PE80-VMW6 (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M25PE80-VMW6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 25/43頁(yè) |
| 文件大?。?/td> | 599K |
| 代理商： | M25PE80-VMW6 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)當(dāng)前第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
25/43
M25PE80
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all
bits inside the chosen page. Before it can be ac-
cepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Page Erase (PE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address Bytes on Serial
Data Input (D). Any address inside the Page is a
valid address for the Page Erase (PE) instruction.
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 18.
.
Chip Select (S) must be driven High after the
eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, the self-timed Page Erase cycle
(whose duration is t
PE
) is initiated. While the Page
Erase cycle is in progress, the Status Register
may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Page Erase cycle, and
is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable
Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page
that is Hardware or software Protected is not exe-
cuted.
Any Page Erase (PE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 18. Page Erase (PE)
Instruction Sequence
Note: Address bits A23 to A19 are Don’t Care.
24 Bit Address
C
D
AI04046
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PXX | 4 Mbit Uniform Sector, Serial Flash Memory |
| M27128AF6 | NMOS 16K 2K x 8 UV EPROM |
| M27128A-1F6 | NMOS 16K 2K x 8 UV EPROM |
| M27256 | NMOS 256K 32K x 8 UV EPROM |
| M27256-1F1 | NMOS 256K 32K x 8 UV EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMW6G | 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE80-VMW6P | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMW6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMW6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。