參數(shù)資料
型號： M25PE40VMN6TG
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 48/60頁
文件大?。?/td> 315K
代理商： M25PE40VMN6TG
DC and AC parameters
M25PE40
48/60
M
AC characteristics (25 MHz operation)
Table 18.
Test conditions specified in
Table 14
and
Table 15
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP,
WREN, WRDI, RDSR
D.C.
25
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH (1)
t
CL (1)
t
CLH
Clock High Time
18
ns
t
CLL
Clock Low Time
18
ns
Clock Slew Rate
2
(peak-to-peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
10
ns
t
CHSL
S Not Active Hold Time (relative to C)
10
ns
t
DVCH
t
DSU
Data In Setup Time
5
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
10
ns
t
SHCH
S Not Active Setup Time (relative to C)
10
ns
t
SHSL
t
SHQZ (2)
t
CSH
S Deselect Time
100
ns
t
DIS
Output Disable Time
15
ns
t
CLQV
t
V
Clock Low to Output Valid
15
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
THSL
Top Sector Lock Setup Time
50
ns
t
SHTL
t
DP (2)
t
RDP (2)
Top Sector Lock Hold Time
100
ns
S to Deep Power-down
3
μ
s
S High to Standby Power mode
30
μ
s
t
PW
(3)
Page Write Cycle Time (256 bytes)
11
25
ms
Page Write Cycle Time (n bytes)
10.2+
n*0.8/256
t
PP
(3)
Page Program Cycle Time (256 bytes)
1.2
5
ms
Page Program Cycle Time (n bytes)
0.4+
n*0.8/256
t
PE
Page Erase Cycle Time
10
20
ms
t
SE
Sector Erase Cycle Time
1
5
s
1.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
2.
3.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes. (1
≤
n
≤
256)
相關(guān)PDF資料
PDF描述
M25PE40VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMP6G 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
M25PE40VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMP6TP 2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500;
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE40-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40VMN6TP 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N T/R 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N T/R
M25PE40-VMN6TP 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
M25PE40-VMN6TPBA 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel 制造商:Micron Technology Inc 功能描述:IC FLASH 4MX1 PBF SOIC 3.0V
M25PE40VMP6G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
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