參數(shù)資料
型號(hào): M25PE40VMN6P
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 8/60頁(yè)
文件大小: 315K
代理商: M25PE40VMN6P
Signal description
M25PE40
8/60
2
Signal description
2.1
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby Power mode (this is not the Deep Power-down mode). Driving
Chip Select (S) Low selects the device, placing it in the Active Power mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
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