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參數(shù)資料
| 型號： | M25PE40VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 41/60頁 |
| 文件大?。?/td> | 315K |
| 代理商： | M25PE40VMN6G |
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M25PE40
Instructions
41/60
6.17
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode.
The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S)
Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be
driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 23
.
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select
(S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven
Low, cause the instruction to be rejected, and not executed.
After Chip Select (S) has been driven High, followed by a delay, t
RDP
, the device is put in the
Standby Power mode. Chip Select (S) must remain High at least until this period is over. The
device waits to be selected, so that it can receive, decode and execute instructions.
Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 23.
Release from Deep Power-down (RDP) instruction sequence
C
D
AI06807
S
2
1
3
4
5
6
7
0
t
RDP
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M25PE40VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMN6G | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6P | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 4MBIT 512KX8 15NS 8SOIC N - Trays 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray |
| M25PE40VMN6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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