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參數資料
| 型號： | M25PE16-VMW6TG |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數： | 8/56頁 |
| 文件大?。?/td> | 334K |
| 代理商： | M25PE16-VMW6TG |
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Signal description
M25PE16
8/56
2
Signal description
2.1
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby mode (this is not the Deep Power-down mode). Driving Chip
Select (S) Low selects the device, placing it in the Active Power mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (RESET)
The Reset (RESET) input provides a hardware reset for the memory.
When Reset (RESET) is driven High, the memory is in the normal operating mode. When
Reset (RESET) is driven Low, the memory will enter the Reset mode. In this mode, the
output is high impedance.
Driving Reset (RESET) Low while an internal operation is in progress will affect this
operation (write, program or erase cycle) and data may be lost.
See
Table 12
for the status of the device after a RESET Low pulse.
2.6
Write Protect (W)
The Write Protect (W) input is used to freeze the size of the area of memory that is
protected against write, program and erase instructions (as specified by the values in the
BP2, BP1 and BP0 bits of the Status Register). See
Section 6.4: Read Status Register
(RDSR)
.
相關PDF資料 |
PDF描述 |
|---|---|
| M25PE16-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M25PE16-VMW6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE20 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-V6D11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25PE20-VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
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