參數(shù)資料
型號(hào)： M25PE10-VMN6G
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 10/60頁(yè)
文件大小： 310K
代理商： M25PE10-VMN6G
SPI modes
M25PE20, M25PE10
10/60
3
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
CPOL=0, CPHA=0
CPOL=1, CPHA=1
●
●
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in
Figure 5
, is the clock polarity when the
bus master is in Standby mode and not transferring data:
C remains at 0 for (CPOL=0, CPHA=0)
C remains at 1 for (CPOL=1, CPHA=1)
●
●
Figure 4.
Bus master and memory devices on the SPI bus
1.
Figure 4
shows an example of three devices connected to an MCU, on an SPI bus. Only one
device is selected at a time, so only one device drives the Serial Data Output (Q) line at a
time, the other devices are high impedance. Resistors R (represented in
Figure 4
) ensure
that the M25PE20 or M25PE10 is not selected if the Bus Master leaves the S line in the high
impedance state. As the Bus Master may enter a state where all inputs/outputs are in high
impedance at the same time (for example, when the Bus Master is reset), the clock line (C)
must be connected to an external pull-down resistor so that, when all inputs/outputs become
high impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S
and C do not become High at the same time, and so, that the t
SHCH
requirement is met).
The typical value of R is 100 k
, assuming that the time constant R*C
p
(C
p
= parasitic
capacitance of the bus line) is shorter than the time during which the Bus Master leaves the
SPI bus in high impedance.
The Write Protect or Top Sector Lock (W or TSL) signal should be driven, High or Low as appropriate.
AI13558
SPI Bus Master
SPI Memory
Device
SDO
SDI
SCK
C
Q
D
S
SPI Memory
Device
C
Q
D
S
SPI Memory
Device
C
Q
D
S
CS3
CS2 CS1
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
W
or
TSL
HOLD
W
or
TSL
HOLD
W
or
TSL
HOLD
R
R
R
V
CC
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
V
SS
R
相關(guān)PDF資料
PDF描述
M25PE20-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE10-VMN6P 功能描述:閃存 SERIAL PAGE ERASE FLASH 1MBIT DATAS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE10-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE10-VMN6TP 功能描述:電可擦除可編程只讀存儲(chǔ)器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M25PE10-VMN6TPBA 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PE10-VMN6TPBA TR 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO
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