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參數(shù)資料
| 型號(hào)： | M25P80VMN3TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 128K |
| 代理商： | M25P80VMN3TG |
M25PXX
2/7
SUMMARY DESCRIPTION
The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial
Flash Memory, with advanced write protection
mechanisms, accessed by a high speed SPI-com-
patible bus.
The memory can be programmed 1 to 256 bytes at
a time, using the Page Program instruction.
The memory is organized as a number of sectors,
each containing 256 or 128 pages. Each page is
256 bytes wide.
The whole memory can be erased using the Bulk
Erase instruction, or a sector at a time, using the
Sector Erase instruction.
Figure 2. Logic Diagram
Table 2. Signal Names
Figure 3. SO8 and VDFPN Connections
Note: 1. There is an exposed die paddle on the underside of the
MLP8 package. This is pulled, internally, to VSS, and
must not be allowed to be connected to any other voltage
or signal line on the PCB.
Figure 4. SO16 Connections
Note: 1. DU = Don’t Use
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
AI10258
S
VCC
M25Pxx
HOLD
VSS
W
Q
C
D
1
AI10259
2
3
4
8
7
6
5
D
VSS
C
HOLD
Q
SVCC
W
M25Pxx
1
AI10260
2
3
4
16
15
14
13
DU
VCC
HOLD
DU
M25Pxx
5
6
7
8
12
11
10
9
W
Q
VSS
DU
S
D
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P80-VMN3TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface |
| M25P80VMN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P80-VMN3TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface |
| M25P80-VMN3TP/4 | 功能描述:IC FLASH 8MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25P80-VMN3TPB | 功能描述:IC SRL FLASH 8MBIT 3V 75MHZ S08N RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
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